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Issue 44, 2013
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Bilayer silicene with an electrically-tunable wide band gap

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Abstract

Tuning electronic band gaps of materials has proven very challenging, but is fundamentally relevant for optoelectronic applications. We demonstrate that a widely and continuously tunable band gap can be realized in the single-gated bilayer silicene. Bilayer silicene in which 50% of the Si atoms take sp3 hybridization and 50% of the Si atoms do sp2/sp3 hybridization has unusual electronic properties with two Dirac points formed near the Fermi level. Two layers are connected by σ-bonding orbitals. More importantly, we found that the single-gated bilayer silicene could generate a continuously and widely tunable band gap of up to 1.13 eV, which is largely wider than that (0.25 eV) of dual-gated bilayer graphene only at electric displacement fields. This enhanced tuning effect is attributed to dual-polarization of localized π states from the single gated electric field and polarized σ-bonding orbitals of interlayers.

Graphical abstract: Bilayer silicene with an electrically-tunable wide band gap

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Publication details

The article was received on 15 Aug 2013, accepted on 05 Sep 2013 and first published on 09 Sep 2013


Article type: Paper
DOI: 10.1039/C3RA44392B
Citation: RSC Adv., 2013,3, 21943-21948
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    Bilayer silicene with an electrically-tunable wide band gap

    J. Liu and W. Zhang, RSC Adv., 2013, 3, 21943
    DOI: 10.1039/C3RA44392B

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