Issue 44, 2013
From the journal:

RSC Advances

Alkali earth metal dopants for high performance and aqueous-derived ZnO TFT†

Si Yun Park,a   Kyongjun Kim,a   Keon-Hee Lim,a   Eungkyu Lee,a   Seonjo Kim,b   Hyungjun Kimb  and  Youn Sang Kim*ac  

* Corresponding authors

a Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-744, Republic of Korea
E-mail: younskim@snu.ac.kr
Tel: +82-31-888-9143

b School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-Gu, Seoul, Republic of Korea

c Advanced Institutes of Convergence Technology, 864-1 Iui-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-270, Republic of Korea

Abstract

We introduce high performance, low-temperature (<300 °C), and aqueous precursor-derived ZnO thin film transistors (TFTs) with alkali earth metal doping. Ca-doped ZnO TFTs exhibited excellent electrical performance with a field effect mobility of 6 cm2 V−1 s−1 and an on/off current ratio of 107. The origin of the enhancement in electrical properties by alkali earth metal dopants in ZnO was also investigated.

Graphical abstract: Alkali earth metal dopants for high performance and aqueous-derived ZnO TFT

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Article information

DOI
https://doi.org/10.1039/C3RA42784F
Article type
Communication
Submitted
05 Jun 2013
Accepted
10 Sep 2013
First published
16 Sep 2013

RSC Adv., 2013,3, 21339-21342

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Alkali earth metal dopants for high performance and aqueous-derived ZnO TFT

S. Y. Park, K. Kim, K. Lim, E. Lee, S. Kim, H. Kim and Y. S. Kim, RSC Adv., 2013, 3, 21339 DOI: 10.1039/C3RA42784F

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