Issue 11, 2018

Controlled doping of transition metal dichalcogenides by metal work function tuning in phthalocyanine compounds

Abstract

We explored surface charge transfer interaction between a family of phthalocyanine (Pc) compounds and transition metal dichalcogenides (TMDs). Comparing the device characteristics of TMD field-effect transistors (FETs), we demonstrate both p-type and n-type doping of TMDs by tuning the work function of the metal substitution in the Pc compound. Our findings suggest a near linear correlation between the metal work function and doping level. Such doping predictability has yet to be achieved whereas we provide here the first report of its kind.

Graphical abstract: Controlled doping of transition metal dichalcogenides by metal work function tuning in phthalocyanine compounds

Supplementary files

Article information

Article type
Paper
Submitted
14 Nov 2017
Accepted
06 Feb 2018
First published
01 Mar 2018

Nanoscale, 2018,10, 5148-5153

Controlled doping of transition metal dichalcogenides by metal work function tuning in phthalocyanine compounds

C. J. Benjamin, S. Zhang and Z. Chen, Nanoscale, 2018, 10, 5148 DOI: 10.1039/C7NR08497H

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