Strain engineering, efficient excitonic photoluminescence, and exciton funnelling in unmodified MoS2 nanosheets

Abstract

We established locally varying strain fields in unmodified MoS₂ nanosheets. The approach relies on dry release in place of multilayer MoS₂ on textured Si substrates. By this process we demonstrated intense photoluminescence, a ∼70 meV decrease of the transition energy, and exciton funneling in ∼4 nm-thick MoS₂ films.