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Issue 3, 2017
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Electronic and optical properties of oxygen vacancies in amorphous Ta2O5 from first principles

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Abstract

Oxygen vacancies are important defects considered to play a central role in the electronic and optical properties of tantalum pentoxide (Ta2O5) films and devices. Despite extensive experimental studies on oxygen vacancies in Ta2O5, the reported defect states are ambiguously identified due to the absence of accurate and conclusive theoretical evidence. Here we investigate the thermodynamic, electronic, and optical properties of oxygen vacancies in amorphous Ta2O5 by first-principles calculations based on hybrid-functional density functional theory (DFT). The calculated thermodynamic and optical transition levels are in good agreement with a broad range of diverse measured properties with various experimental methods, providing conclusive evidence for the identification of the defect states observed in experiments as originating from oxygen vacancies. Our calculations also predict the formation of spin-polarized polarons. Our results elucidate the fundamental atomistic properties of oxygen vacancies in various oxidation states as a function of growth conditions and provide guidance to control the properties of Ta2O5 films/devices.

Graphical abstract: Electronic and optical properties of oxygen vacancies in amorphous Ta2O5 from first principles

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Publication details

The article was received on 07 Oct 2016, accepted on 14 Dec 2016 and first published on 15 Dec 2016


Article type: Paper
DOI: 10.1039/C6NR07892C
Citation: Nanoscale, 2017,9, 1120-1127
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    Electronic and optical properties of oxygen vacancies in amorphous Ta2O5 from first principles

    J. Lee, W. D. Lu and E. Kioupakis, Nanoscale, 2017, 9, 1120
    DOI: 10.1039/C6NR07892C

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