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Issue 5, 2017
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Spatially uniform resistance switching of low current, high endurance titanium–niobium-oxide memristors

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Abstract

We analyzed micrometer-scale titanium–niobium-oxide prototype memristors, which exhibited low write-power (<3 μW) and energy (<200 fJ per bit per μm2), low read-power (∼nW), and high endurance (>millions of cycles). To understand their physico-chemical operating mechanisms, we performed in operando synchrotron X-ray transmission nanoscale spectromicroscopy using an ultra-sensitive time-multiplexed technique. We observed only spatially uniform material changes during cell operation, in sharp contrast to the frequently detected formation of a localized conduction channel in transition-metal–oxide memristors. We also associated the response of assigned spectral features distinctly to non-volatile storage (resistance change) and writing of information (application of voltage and Joule heating). These results provide critical insights into high-performance memristors that will aid in device design, scaling and predictive circuit-modeling, all of which are essential for the widespread deployment of successful memristor applications.

Graphical abstract: Spatially uniform resistance switching of low current, high endurance titanium–niobium-oxide memristors

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Publication details

The article was received on 29 Sep 2016, accepted on 23 Nov 2016 and first published on 24 Nov 2016


Article type: Communication
DOI: 10.1039/C6NR07671H
Citation: Nanoscale, 2017,9, 1793-1798
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    Spatially uniform resistance switching of low current, high endurance titanium–niobium-oxide memristors

    S. Kumar, N. Davila, Z. Wang, X. Huang, J. P. Strachan, D. Vine, A. L. David Kilcoyne, Y. Nishi and R. Stanley Williams, Nanoscale, 2017, 9, 1793
    DOI: 10.1039/C6NR07671H

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