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Issue 34, 2016
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Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours

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Abstract

We present ‘unusual’ resistive switching behaviours in electrochemical metallization (ECM) cells utilizing a dual-layer (SiOx/GeSex: SiOx on GeSex) solid electrolyte (SE). The observed switching behaviour markedly varies with the thickness of the upper SiOx layer and compliance current: (i) monostable switching, (ii) counter-eightwise bipolar switching, and (iii) combination of monostable and eightwise bipolar switching behaviours. Focusing on cases (i) and (iii), electrical and chemical analyses on these chameleonic cells were performed in an attempt to gain clues to the understanding of the observed complexity. The chemical analysis indicated the upper SiOx layer as a chemical potential well for Cu ions—Cu ions were largely confined in the well. This non-uniform distribution of Cu across the SE perhaps hints at the mechanism for the complex behaviour; it may be a ‘zero-sum game’ between SiOx and GeSex layers, in which the two layers fight over the limited number of Cu atoms/ions.

Graphical abstract: Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours

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Publication details

The article was received on 19 May 2016, accepted on 29 Jul 2016 and first published on 29 Jul 2016


Article type: Paper
DOI: 10.1039/C6NR04072A
Citation: Nanoscale, 2016,8, 15621-15628
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    Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours

    H. Lim, R. Soni, D. Kim, G. Kim, V. Kornijcuk, I. Kim, J. Park, C. S. Hwang and D. S. Jeong, Nanoscale, 2016, 8, 15621
    DOI: 10.1039/C6NR04072A

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