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Issue 3, 2016
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Epitaxial integration of a nanoscale BiFeO3 phase boundary with silicon

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Abstract

The successful integration of the strain-driven nanoscale phase boundary of BiFeO3 onto a silicon substrate is demonstrated with extraordinary ferroelectricity and ferromagnetism. The detailed strain history is delineated through a reciprocal space mapping technique. We have found that a distorted monoclinic phase forms prior to a tetragonal-like phase, a phenomenon which may correlates with the thermal strain induced during the growth process.

Graphical abstract: Epitaxial integration of a nanoscale BiFeO3 phase boundary with silicon

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Publication details

The article was received on 11 Oct 2015, accepted on 09 Dec 2015 and first published on 10 Dec 2015


Article type: Communication
DOI: 10.1039/C5NR07033C
Citation: Nanoscale, 2016,8, 1322-1326
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    Epitaxial integration of a nanoscale BiFeO3 phase boundary with silicon

    W. Liang, C. Peng, R. Huang, W. Kuo, Y. Huang, C. Adamo, Y. Chen, L. Chang, J. Juang, D. G. Schlom and Y. Chu, Nanoscale, 2016, 8, 1322
    DOI: 10.1039/C5NR07033C

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