High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift

Faruk Dirisaglik; Gokhan Bakan; Zoila Jurado; Sadid Muneer; Mustafa Akbulut; Jonathan Rarey; Lindsay Sullivan; Maren Wennberg; Adrienne King; Lingyi Zhang; Rebecca Nowak; Chung Lam; Helena Silva; Ali Gokirmak

doi:10.1039/C5NR05512A

High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift†

Faruk Dirisaglik,*^a Gokhan Bakan,^a Zoila Jurado,^a Sadid Muneer,^a Mustafa Akbulut,^a Jonathan Rarey,^a Lindsay Sullivan,^a Maren Wennberg,^a Adrienne King,^a Lingyi Zhang,^a Rebecca Nowak,^a Chung Lam,^b Helena Silva^a and Ali Gokirmak*^a

Author affiliations

* Corresponding authors

^a Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA
E-mail: faruk.dirisaglik@uconn.edu, gokirmak@engr.uconn.edu

^b IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA

Abstract

During the fast switching in Ge₂Sb₂Te₅ phase change memory devices, both the amorphous and fcc crystalline phases remain metastable beyond the fcc and hexagonal transition temperatures respectively. In this work, the metastable electrical properties together with crystallization times and resistance drift behaviour of GST are studied using a high-speed, device-level characterization technique in the temperature range of 300 K to 675 K.

Nanoscale

High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift†

Abstract

Supplementary files

Article information

Download Citation

Permissions

High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift

Social activity

Search articles by author

Spotlight

Advertisements