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Issue 43, 2015
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Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM

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Abstract

We present results from an imaging study of filamentary conduction in silicon suboxide resistive RAM devices. We used a conductive atomic force microscope to etch through devices while measuring current, allowing us to produce tomograms of conductive filaments. To our knowledge this is the first report of such measurements in an intrinsic resistance switching material.

Graphical abstract: Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM

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Publication details

The article was received on 24 Jul 2015, accepted on 07 Oct 2015 and first published on 14 Oct 2015


Article type: Communication
DOI: 10.1039/C5NR04982B
Citation: Nanoscale, 2015,7, 18030-18035
  • Open access: Creative Commons BY license
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    Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM

    M. Buckwell, L. Montesi, S. Hudziak, A. Mehonic and A. J. Kenyon, Nanoscale, 2015, 7, 18030
    DOI: 10.1039/C5NR04982B

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