Issue 14, 2014

In situ probing of doping- and stress-mediated phase transitions in a single-crystalline VO2 nanobeam by spatially resolved Raman spectroscopy

Abstract

We demonstrate an experimental in situ observation of the temperature-dependent evolution of doping- and stress-mediated structural phase transitions in an individual single-crystalline VO2 nanobeam on a Au-coated substrate under exposure to hydrogen gas using spatially resolved Raman spectroscopy. The nucleation temperature of the rutile R structural phase in the VO2 nanobeam upon heating under hydrogen gas was lower than that under air. The spatial structural phase evolution behavior along the length of the VO2 nanobeam under hydrogen gas upon heating was much more inhomogeneous than that along the length of the same nanobeam under air. The triclinic T phase of the VO2 nanobeam upon heating under hydrogen gas transformed to the R phase and this R phase was stabilized even at room temperature in air after sample cooling. In particular, after the VO2 nanobeam with the R phase was annealed at approximately 250 °C in air, it exhibited the monoclinic M1 phase (not the T phase) at room temperature during heating and cooling cycles. These results were attributed to the interplay between hydrogen doping and stress associated with nanobeam–substrate interactions. Our study has important implications for engineering metal–insulator transition properties and developing functional devices based on VO2 nanostructures through doping and stress.

Graphical abstract: In situ probing of doping- and stress-mediated phase transitions in a single-crystalline VO2 nanobeam by spatially resolved Raman spectroscopy

Supplementary files

Article information

Article type
Paper
Submitted
28 Feb 2014
Accepted
24 Apr 2014
First published
09 Jun 2014

Nanoscale, 2014,6, 8068-8074

In situ probing of doping- and stress-mediated phase transitions in a single-crystalline VO2 nanobeam by spatially resolved Raman spectroscopy

S. Chang, J. B. Park, G. Lee, H. J. Kim, J. Lee, T. Bae, Y. Han, T. J. Park, Y. S. Huh and W. Hong, Nanoscale, 2014, 6, 8068 DOI: 10.1039/C4NR01118J

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