Jump to main content
Jump to site search
PLANNED MAINTENANCE Close the message box

Scheduled maintenance upgrade on Thursday 4th of May 2017 from 8.00am to 9.00am (BST).

During this time our websites will be offline temporarily. If you have any questions please use the feedback button on this page. We apologise for any inconvenience this might cause and thank you for your patience.


Issue 8, 2014
Previous Article Next Article

Angular dependence of the magnetoresistance effect in a silicon based p–n junction device

Author affiliations

Abstract

We report a pronounced angular dependence of the magnetoresistance (MR) effect in a silicon based p–n junction device at room temperature by manipulating the space charge region of the p–n junction under a magnetic field. For the p–n junction device with various space charge region configurations, we find that all the angular dependence of the MR effect is proportional to sin2(θ), where the θ is the angle between the magnetic field and the driving current. With increasing the magnetic field and driving current, the anisotropic MR effect is obviously improved. At room temperature, under a magnetic field 2 T and driving current 20 mA, the MR ratio is about 50%, almost one order of amplitude larger than that in the magnetic material permalloy. Our results reveal an interpretation of the MR effect in the non-magnetic p–n junction in terms of the Lorentz force and give a new way for the development of future magnetic sensors with non-magnetic p–n junctions.

Graphical abstract: Angular dependence of the magnetoresistance effect in a silicon based p–n junction device

  • This article is part of the themed collection: ChinaNANO
Back to tab navigation
Please wait while Download options loads

Supplementary files

Publication details

The article was received on 09 Aug 2013, accepted on 02 Jan 2014 and first published on 08 Jan 2014


Article type: Paper
DOI: 10.1039/C3NR04077A
Citation: Nanoscale, 2014,6, 3978-3983
  •   Request permissions

    Angular dependence of the magnetoresistance effect in a silicon based p–n junction device

    T. Wang, M. Si, D. Yang, Z. Shi, F. Wang, Z. Yang, S. Zhou and D. Xue, Nanoscale, 2014, 6, 3978
    DOI: 10.1039/C3NR04077A

Search articles by author