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A high impact peer reviewed journal publishing experimental and theoretical work across the breadth of nanoscience and nanotechnology


Angular dependence of the magnetoresistance effect in a silicon based p–n junction device

Corresponding authors
The Key Laboratory for Magnetism and Magnetic materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China
E-mail: yangdzh@lzu.edu.cn, xueds@lzu.edu.cn
The Department of physics, Tongji University, Shanghai 200092, China
Nanoscale, 2014,6, 3978-3983

DOI: 10.1039/C3NR04077A
Received 09 Aug 2013, Accepted 02 Jan 2014
First published online 08 Jan 2014

This article is part of themed collection: ChinaNANO
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Supplementary Info