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Angular dependence of the magnetoresistance effect in a silicon based p–n junction device

Corresponding authors
The Key Laboratory for Magnetism and Magnetic materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China
The Department of physics, Tongji University, Shanghai 200092, China
Nanoscale, 2014,6, 3978-3983

DOI: 10.1039/C3NR04077A
Received 09 Aug 2013, Accepted 02 Jan 2014
First published online 08 Jan 2014

This article is part of themed collection: ChinaNANO
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