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Issue 8, 2014
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Angular dependence of the magnetoresistance effect in a silicon based p–n junction device

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Abstract

We report a pronounced angular dependence of the magnetoresistance (MR) effect in a silicon based p–n junction device at room temperature by manipulating the space charge region of the p–n junction under a magnetic field. For the p–n junction device with various space charge region configurations, we find that all the angular dependence of the MR effect is proportional to sin2(θ), where the θ is the angle between the magnetic field and the driving current. With increasing the magnetic field and driving current, the anisotropic MR effect is obviously improved. At room temperature, under a magnetic field 2 T and driving current 20 mA, the MR ratio is about 50%, almost one order of amplitude larger than that in the magnetic material permalloy. Our results reveal an interpretation of the MR effect in the non-magnetic p–n junction in terms of the Lorentz force and give a new way for the development of future magnetic sensors with non-magnetic p–n junctions.

Graphical abstract: Angular dependence of the magnetoresistance effect in a silicon based p–n junction device

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Publication details

The article was received on 09 Aug 2013, accepted on 02 Jan 2014 and first published on 08 Jan 2014


Article type: Paper
DOI: 10.1039/C3NR04077A
Author version available: Download Author version (PDF)
Citation: Nanoscale, 2014,6, 3978-3983
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    Angular dependence of the magnetoresistance effect in a silicon based p–n junction device

    T. Wang, M. Si, D. Yang, Z. Shi, F. Wang, Z. Yang, S. Zhou and D. Xue, Nanoscale, 2014, 6, 3978
    DOI: 10.1039/C3NR04077A

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