A high impact peer reviewed journal publishing experimental and theoretical work across the breadth of nanoscience and nanotechnology
Impact Factor 6.739 24 Issues per Year
Paper

Angular dependence of the magnetoresistance effect in a silicon based p–n junction device

Tao Wang,a   Mingsu Si,a   Dezheng Yang,*a   Zhong Shi,b   Fangcong Wang,a   Zhaolong Yang,a   Shiming Zhoub and   Desheng Xue*a  
Show Affiliations
Hide Affiliations
*
Corresponding authors
a
The Key Laboratory for Magnetism and Magnetic materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China
E-mail: yangdzh@lzu.edu.cn, xueds@lzu.edu.cn
b
The Department of physics, Tongji University, Shanghai 200092, China
Nanoscale, 2014,6, 3978-3983

DOI: 10.1039/C3NR04077A
Received 09 Aug 2013, Accepted 02 Jan 2014
First published online 08 Jan 2014

This article is part of themed collection: ChinaNANO and ChinaNano 2013
| | | | | | More
Please wait while Download options loads
Download Citation
 
 

Supplementary Info