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Issue 19, 2013
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Large networks of vertical multi-layer graphenes with morphology-tunable magnetoresistance

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Abstract

We report on the comparative study of magnetotransport properties of large-area vertical few-layer graphene networks with different morphologies, measured in a strong (up to 10 T) magnetic field over a wide temperature range. The petal-like and tree-like graphene networks grown by a plasma enhanced CVD process on a thin (500 nm) silicon oxide layer supported by a silicon wafer demonstrate a significant difference in the resistance–magnetic field dependencies at temperatures ranging from 2 to 200 K. This behaviour is explained in terms of the effect of electron scattering at ultra-long reactive edges and ultra-dense boundaries of the graphene nanowalls. Our results pave a way towards three-dimensional vertical graphene-based magnetoelectronic nanodevices with morphology-tuneable anisotropic magnetic properties.

Graphical abstract: Large networks of vertical multi-layer graphenes with morphology-tunable magnetoresistance

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Publication details

The article was received on 31 Jan 2013, accepted on 26 Mar 2013 and first published on 02 Apr 2013


Article type: Paper
DOI: 10.1039/C3NR00550J
Citation: Nanoscale, 2013,5, 9283-9288
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    Large networks of vertical multi-layer graphenes with morphology-tunable magnetoresistance

    Z. Yue, I. Levchenko, S. Kumar, D. Seo, X. Wang, S. Dou and K. (. Ostrikov, Nanoscale, 2013, 5, 9283
    DOI: 10.1039/C3NR00550J

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