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Paper

A DLVO model for catalyst motion in metal-assisted chemical etching based upon controlled out-of-plane rotational etching and force-displacement measurements

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Corresponding authors
a
School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, USA
E-mail: ohildreth@gatech.edu, owen.hildreth@nist.gov
b
Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, USA
E-mail: konradr@mit.edu
c
Woodruff School of Mechanical Engineering and Petit Institute for Bioengineering and Bioscience, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, USA
E-mail: agf@gatech.edu
d
Department of Electronics Engineering, The Chinese University of Hong Kong Shitan, Hong Kong, China
E-mail: cp.wong@mse.gatech.edu
Nanoscale, 2013,5, 961-970

DOI: 10.1039/C2NR32293E
Received 22 Jun 2012, Accepted 28 Nov 2012
First published online 04 Dec 2012
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