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Issue 3, 2013
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A DLVO model for catalyst motion in metal-assisted chemical etching based upon controlled out-of-plane rotational etching and force-displacement measurements

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Abstract

Metal-assisted Chemical Etching of silicon has recently emerged as a powerful technique to fabricate 1D, 2D, and 3D nanostructures in silicon with high feature fidelity. This work demonstrates that out-of-plane rotational catalysts utilizing polymer pinning structures can be designed with excellent control over rotation angle. A plastic deformation model was developed establishing that the catalyst is driven into the silicon substrate with a minimum pressure differential across the catalyst thickness of 0.4–0.6 MPa. Force–displacement curves were gathered between an Au tip and Si or SiO2 substrates under acidic conditions to show that Derjaguin and Landau, Verwey and Overbeek (DLVO) based forces are capable of providing restorative forces on the order of 0.2–0.3 nN with a calculated 11–18 MPa pressure differential across the catalyst. This work illustrates that out-of-plane rotational structures can be designed with controllable rotation and also suggests a new model for the driving force for catalyst motion based on DLVO theory. This process enables the facile fabrication of vertically aligned thin-film metallic structures and scalloped nanostructures in silicon for applications in 3D micro/nano-electromechanical systems, photonic devices, nanofluidics, etc.

Graphical abstract: A DLVO model for catalyst motion in metal-assisted chemical etching based upon controlled out-of-plane rotational etching and force-displacement measurements

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Publication details

The article was received on 22 Jun 2012, accepted on 28 Nov 2012 and first published on 04 Dec 2012


Article type: Paper
DOI: 10.1039/C2NR32293E
Citation: Nanoscale, 2013,5, 961-970
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    A DLVO model for catalyst motion in metal-assisted chemical etching based upon controlled out-of-plane rotational etching and force-displacement measurements

    O. J. Hildreth, K. Rykaczewski, A. G. Fedorov and C. P. Wong, Nanoscale, 2013, 5, 961
    DOI: 10.1039/C2NR32293E

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