Issue 6, 2012

Confining grains of textured Cu2O films to single-crystal nanowires and resultant change in resistive switching characteristics

Abstract

By confining columnar grains of textured oxide film using anodized aluminum oxide template, we could obtain a grain-boundary-free (GB-free) cuprous oxide (Cu2O) nanowire arrays with a narrow diameter distribution and a high density under the same electrochemical deposition condition. A two-terminal device fabricated using an individual GB-free nanowire and Au/Cr electrodes exhibits bipolar resistive switching contrary to the unipolar one of a textured film, and Schottky-like conduction. On the other hand, a nanowire device with Pt electrodes reveals non-switching behavior and Ohmic conduction. Thus, we can propose that the bipolar switching of a nanowire device with Au/Cr electrodes may result from the modulation of Schottky barrier at the interface by migration of oxygen vacancies while the unipolar one of a textured film may be defined as the bulky filamentary switching along the GBs in the GB-embedded texture films.

Graphical abstract: Confining grains of textured Cu2O films to single-crystal nanowires and resultant change in resistive switching characteristics

Article information

Article type
Paper
Submitted
27 Dec 2011
Accepted
19 Jan 2012
First published
25 Jan 2012

Nanoscale, 2012,4, 2029-2033

Confining grains of textured Cu2O films to single-crystal nanowires and resultant change in resistive switching characteristics

X. L. Deng, S. Hong, I. Hwang, J. Kim, J. H. Jeon, Y. C. Park, J. Lee, S. Kang, T. Kawai and B. H. Park, Nanoscale, 2012, 4, 2029 DOI: 10.1039/C2NR12100J

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