Issue 8, 2011

Diameter-dependent internal gain in ZnO micro/nanowires under electron beam irradiation

Abstract

We observed a conductivity gain in intrinsic ZnO micro/nanowires at characteristic diameter scales from nanoscale to microscale by employing metal–semiconductor–metal structures with ohmic contacts under electron beam irradiation. The conductivity is enhanced under electron beam illumination and the magnitude is inversely proportional to the micro/nanowire diameter from 400 nm to 1300 nm at constant radiation intensity. We also introduced a model to simulate the diameter-dependent electric potential distribution. We attribute these observations to the variation of the effective electron carrier density upon varying diameters of ZnO micro/nanowires, as a result of field effects from the diameter-dependent population of the surface-trapped holes.

Graphical abstract: Diameter-dependent internal gain in ZnO micro/nanowires under electron beam irradiation

Supplementary files

Article information

Article type
Communication
Submitted
06 May 2011
Accepted
18 May 2011
First published
22 Jun 2011

Nanoscale, 2011,3, 3060-3063

Diameter-dependent internal gain in ZnO micro/nanowires under electron beam irradiation

Q. Zhang, J. Qi, X. Li and Y. Zhang, Nanoscale, 2011, 3, 3060 DOI: 10.1039/C1NR10459D

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements