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Issue 7, 2013
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Quantitative probing of surface charges at dielectric–electrolyte interfaces

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Abstract

The intrinsic charging status at the dielectric–electrolyte interface (DEI) plays a critical role for electrofluidic gating in microfluidics and nanofluidics, which offers opportunities for integration of wet ionics with dry electronics. A convenient approach to quantitatively probe the surface charges at the DEI for material pre-selection purpose has been lacking so far. We report here a low-cost, off-chip extended gate field effect transistor configuration for direct electrostatic probing the charging status at the DEI. Capacitive coupling between the surface charges and the floating extended gate is utilized for signal transducing. The relationship between the surface charge density and the experimentally accessible quantities is given by device modeling. The multiplexing ability makes measuring a local instead of a globally averaged surface charge possible.

Graphical abstract: Quantitative probing of surface charges at dielectric–electrolyte interfaces

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Publication details

The article was received on 09 Dec 2012, accepted on 31 Jan 2013 and first published on 04 Feb 2013


Article type: Paper
DOI: 10.1039/C3LC41351A
Citation: Lab Chip, 2013,13, 1431-1436
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    Quantitative probing of surface charges at dielectric–electrolyte interfaces

    W. Guan, N. K. Rajan, X. Duan and M. A. Reed, Lab Chip, 2013, 13, 1431
    DOI: 10.1039/C3LC41351A

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