Issue 10, 2008

Electric field control and analyte transport in Si/SiO2 fluidic nanochannels

Abstract

This article presents an analysis of the electric field distribution and current transport in fluidic nanochannels fabricated by etching of a silicon chip. The channels were overcoated by a SiO2 layer. The analysis accounts for the current leaks across the SiO2 layer into the channel walls. Suitable voltage biasing of the Si substrate allows eliminating of the leaks or using them to modify the potential distribution of the fluid. Shaping the potential in the fluid can be utilized for solute focusing and separations in fluidic nanochannels.

Graphical abstract: Electric field control and analyte transport in Si/SiO2 fluidic nanochannels

Article information

Article type
Paper
Submitted
12 Mar 2008
Accepted
16 Jul 2008
First published
29 Aug 2008

Lab Chip, 2008,8, 1671-1675

Electric field control and analyte transport in Si/SiO2 fluidic nanochannels

Y. Zhang, T. C. Gamble, A. Neumann, G. P. Lopez, S. R. J. Brueck and D. N. Petsev, Lab Chip, 2008, 8, 1671 DOI: 10.1039/B804256J

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