Improvement of the photo-bias stability of the Zn–Sn–O field effect transistors by an ozone treatment†
Abstract
Highly improved negative bias illumination stress stability was achieved in a Zn–Sn–O field effect transistor after an ozone (O3) treatment. The untreated ZTO FET exhibited a huge negative threshold voltage shift of 4.2 V but the O3 treated device exhibited superior stability under NBIS conditions: the Vth value of the O3 treated ZTO FET for 600 s showed almost no change (ΔVth = −0.07 V) under the same NBIS. The improvement in NBIS stability of the O3 treated ZTO FETs was attributed to the lower oxygen vacancy concentration and retarded desorption of adsorbed oxygen under