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Issue 2, 2012
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Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications

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Abstract

We first demonstrate the use of few layer graphene films directly grown on SiO2 substrates obtained by ambient pressure chemical vapor deposition (APCVD) as counter electrodes in dye-sensitized solar cells (DSSCs). The layer number and crystal size of graphene films can be tuned by changing growth temperature, growth time and gas flow ratio (CH4 : H2). The continuous graphene films exhibit extremely excellent electrical transport properties with a sheet resistance of down to 63.0 Ω sq−1 and extremely high mobility of up to 201.4 cm2 v−1 s−1. The highly conductive graphene films as counter electrodes of DSSCs achieve a photovoltaic efficiency of 4.25%, which is comparable to the DSSC efficiency (4.32%) based on FTO counter electrodes. Our work indicates the great potential of CVD graphene films directly grown on dielectric substrates for photovoltaic and electronic applications.

Graphical abstract: Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications

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Publication details

The article was received on 26 Sep 2011, accepted on 05 Oct 2011 and first published on 03 Nov 2011


Article type: Paper
DOI: 10.1039/C1JM14778A
Citation: J. Mater. Chem., 2012,22, 411-416
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    Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications

    H. Bi, S. Sun, F. Huang, X. Xie and M. Jiang, J. Mater. Chem., 2012, 22, 411
    DOI: 10.1039/C1JM14778A

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