Novel SnSxSe1−xnanocrystals with tunable band gap: experimental and first-principles calculations †
Abstract
In this paper, the structural and electronic properties of ternary SnSxSe1−x semiconductor
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* Corresponding authors
a
Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai, PR China
E-mail:
haowei@sjtu.edu.cn, yfzhang@sjtu.edu.cn
Fax: +86 21 3420 5665
Tel: +86 21 3420 5665
b School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, PR China
c National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, PR China
In this paper, the structural and electronic properties of ternary SnSxSe1−x semiconductor
H. Wei, Y. Su, S. Chen, Y. Lin, Z. Yang, X. Chen and Y. Zhang, J. Mater. Chem., 2011, 21, 12605 DOI: 10.1039/C1JM12968F
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