Issue 29, 2011

Printed Cu source/drain electrode capped by CuO hole injection layer for organic thin film transistors

Abstract

Using conductive functional ink comprising Cu/CuO core–shell nanoparticles, we present the printed Cu source/drain electrode surrounded by a CuO hole injection layer for organic thin-film transistors. The inherent CuO hole injection layer facilitates the transistor with electrical performance comparable to that of a transistor based on a vacuum deposited Au electrode, without additional physical or chemical treatments for obtaining an energetically compatible interface between the electrode and p-type organic semiconductor.

Graphical abstract: Printed Cu source/drain electrode capped by CuO hole injection layer for organic thin film transistors

Supplementary files

Article information

Article type
Communication
Submitted
25 Mar 2011
Accepted
23 May 2011
First published
17 Jun 2011

J. Mater. Chem., 2011,21, 10619-10622

Printed Cu source/drain electrode capped by CuO hole injection layer for organic thin film transistors

S. Jeong, H. C. Song, W. W. Lee, H. J. Suk, S. S. Lee, T. Ahn, J. Ka, Y. Choi, M. H. Yi and B. Ryu, J. Mater. Chem., 2011, 21, 10619 DOI: 10.1039/C1JM11273B

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