Deposition of tetragonal β-In2S3 thin films from tris(N,N-diisopropylmonothiocarbamato)indium(III), In(SOCNiPr2)3, by low pressure metal-organic chemical vapour deposition

Abstract

Tris(N,N-diisopropylmonothiocarbamato)indium(III), In(SOCN ⁱ Pr ₂ ) ₃ , has been prepared by the reaction of indium(III) chloride and lithium N,N-diisopropylmonothiocarbamate. In the solid state, the complex is a distorted trigonal prismatic monomer with a meridional configuration, as characterised by single-crystal X-ray diffraction. In(SOCN ⁱ Pr ₂ ) ₃ has been used as a single-source precursor for the deposition of tetragonal β-In ₂ S ₃ thin films by low pressure metal-organic chemical vapour deposition (LP-MOCVD) at temperatures ranging from 300 to 450 °C, on borosilicate glass substrates.