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Issue 6, 1999
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Deposition of tetragonal β-In2S3 thin films from tris(N,N-diisopropylmonothiocarbamato)indium(III), In(SOCNiPr2)3, by low pressure metal-organic chemical vapour deposition

Abstract

Tris(N,N-diisopropylmonothiocarbamato)indium(III), In(SOCN i Pr 2 ) 3 , has been prepared by the reaction of indium(III) chloride and lithium N,N-diisopropylmonothiocarbamate. In the solid state, the complex is a distorted trigonal prismatic monomer with a meridional configuration, as characterised by single-crystal X-ray diffraction. In(SOCN i Pr 2 ) 3 has been used as a single-source precursor for the deposition of tetragonal β-In 2 S 3 thin films by low pressure metal-organic chemical vapour deposition (LP-MOCVD) at temperatures ranging from 300 to 450 °C, on borosilicate glass substrates.

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Supplementary files


Article type: Paper
DOI: 10.1039/A900503J
Citation: J. Mater. Chem., 1999,9, 1289-1292
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    Deposition of tetragonal β-In2S3 thin films from tris(N,N-diisopropylmonothiocarbamato)indium(III), In(SOCNiPr2)3, by low pressure metal-organic chemical vapour deposition

    G. A. Horley, P. O'Brien, J. Park, A. J. P. White and D. J. Williams, J. Mater. Chem., 1999, 9, 1289
    DOI: 10.1039/A900503J

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