Thermal decomposition of V(NEt2)4 in an MOCVD reactor: a low-temperature route to vanadium carbonitride coatings

Abstract

Carbon-rich vanadium carbonitride films have been grown by MOCVD at low temperature using the tetrakis(diethylamido) vanadium complex V(NEt₂)₄ as a single-source precursor. The main volatile byproducts formed during its thermal decomposition were identified by NMR and on-line mass spectrometric analyses. Under the growth conditions, an equimolecular ratio of HNEt₂ and EtNCHMe was found in addition to CH₃CN and C₂H₄. From these results, an elimination mechanism of the NEt₂ ligands is proposed. It accounts for their high lability and therefore the low nitrogen content of the films. The possible origin of the incorporation of the metalloid elements is also discussed.