Issue 8, 1994
From the journal:

Journal of Materials Chemistry

Investigations into the growth of AIN by MOCVD using trimethylsilylazide as nitrogen source

John Auld,   David J. Houlton,   Anthony C. Jones,   Simon A. Rushworth  and  Gary W. Critchlow  

Abstract

Thin films of AIN have been deposited by atmospheric-pressure MOCVD using trimethylaluminium (Me3Al) and trimethylsilylazide (Me3SiN3) as precursors. The films were deposited at 300 or 450 °C and had growth rates of up to 3 µm h–1

About
Cited by
Related
Download options Please wait...

Article information

DOI
https://doi.org/10.1039/JM9940401245
Article type
Paper

J. Mater. Chem., 1994,4, 1245-1247

Permissions

Request permissions

Investigations into the growth of AIN by MOCVD using trimethylsilylazide as nitrogen source

J. Auld, D. J. Houlton, A. C. Jones, S. A. Rushworth and G. W. Critchlow, J. Mater. Chem., 1994, 4, 1245 DOI: 10.1039/JM9940401245

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Spotlight

Advertisements