Single-phase deposition of α-gallium nitride by a laser-induced transport process

Abstract

Laser-assisted chemical vapour deposition (LCVD) of α-GaN onto sapphire (001) face is described. The bimolecular gas-phase reaction of trimethylgallium (TMG) with ammonia was employed under the influence of an ArF excimer laser (193 nm). The photolytic process permitted the single-phase deposition of GaN crystallites at lower temperatures. The stoichiometric growth was monitored by quadrupole mass analysis (QMA) and X-ray photoelectron spectroscopy (XPS), while the crystalline quality of the as-grown deposits was characterized by X-ray diffraction (XRD), reflection electron diffraction (RED), scanning electron microscopy (SEM) and luminescence measurements. The laser-induced transport process is discussed.