Nanometric in-depth characterization of P diffusion and TiO2 anti-reflective coatings in solar cells by laser ionization time-of-flight mass spectrometry

Abstract

Laser ionization time-of-flight mass spectrometry has been used and demonstrated as a useful technique to obtain in-depth distribution profiles in solar cells. The in-depth distribution of P (a critical feature as it affects the location of the p–n junction) and measurement of the TiO₂ anti-reflective coatings have been successfully demonstrated. In the latter application, a sampling depth of 0.3 nm pulse⁻¹ was achieved. The method has been proved to be fast, it does not require sample handling or preparation, and it is free of charge effects that affect the ion beam techniques.