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This paper reviews two important problems in the field of defect physics and chemistry, for which solutions are needed. The first refers to amorphous silicon and relates to the properties of ‘dangling bonds’. The second is the anodic oxidation of aluminium and the mechanism of atomic transport through the oxide layer.
N. F. Mott, J. Chem. Soc., Faraday Trans. 2, 1989, 85, 517 DOI: 10.1039/F29898500517
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