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Issue 7, 2015
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Exciton diffusion in organic semiconductors

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Abstract

The purpose of this review is to provide a basic physical description of the exciton diffusion in organic semiconductors. Furthermore, experimental methods that are used to measure the key parameters of this process as well as strategies to manipulate the exciton diffusion length are summarized. Special attention is devoted to the temperature dependence of exciton diffusion and its relationship to Förster energy transfer rates. An extensive table of more than a hundred measurements of the exciton diffusion length in various organic semiconductors is presented. Finally, an outlook of remaining challenges for future research is provided.

Graphical abstract: Exciton diffusion in organic semiconductors

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Publication details

The article was received on 20 Mar 2015, accepted on 22 May 2015 and first published on 22 May 2015


Article type: Review Article
DOI: 10.1039/C5EE00925A
Author version available: Download Author version (PDF)
Citation: Energy Environ. Sci., 2015,8, 1867-1888
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    Exciton diffusion in organic semiconductors

    O. V. Mikhnenko, P. W. M. Blom and T. Nguyen, Energy Environ. Sci., 2015, 8, 1867
    DOI: 10.1039/C5EE00925A

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