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Issue 2, 2013
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Strong acceptors in donor–acceptor polymers for high performance thin film transistors

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Abstract

Recent progress in the development of conjugated semiconducting polymers for thin film transistor applications has yielded materials with mobilities consistently exceeding 0.1 cm2 V−1 s−1. Even more significant are recent reports of polymers with TFT mobilities surpassing 1 cm2 V−1 s−1. With performance comparable to those of amorphous silicon TFTs, and with improved material stability, one can realistically envision promising future applications of these polymers. In reviewing the development of conjugated semiconducting polymers, two particularly interesting and significant observations are made. First, most of these high-performance materials are donor–acceptor polymers; and second, high mobilities of above 1 cm2 V−1 s−1 generally involve donor–acceptor polymers with strongly electron accepting moieties. The present perspective covers these latter polymers. We will cover the features that are common among these high-performance polymers and discuss unresolved issues that may determine their performance.

Graphical abstract: Strong acceptors in donor–acceptor polymers for high performance thin film transistors

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Publication details

The article was received on 16 Sep 2012, accepted on 27 Nov 2012 and first published on 10 Dec 2012


Article type: Perspective
DOI: 10.1039/C2EE23505F
Citation: Energy Environ. Sci., 2013,6, 392-406
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    Strong acceptors in donor–acceptor polymers for high performance thin film transistors

    J. D. Yuen and F. Wudl, Energy Environ. Sci., 2013, 6, 392
    DOI: 10.1039/C2EE23505F

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