Overwhelming coexistence of negative differential resistance effect and RRAM

Abstract

An electronic cell that possesses synchronously multi-physical properties is of great importance in the applications of multifunctional electronic devices. In this study, an overwhelming coexistence of negative differential resistance (NDR) effect and resistive switching (RS) memory behavior at room temperature was observed based on Ag/Cu₂ZnSnSe₄ (CZTSe)/Mo devices. The long retention time of ∼10⁴ s and high HRS/LRS resistance ratio of ∼215 can be achieved, indicating that our devices possess excellent resistance random access memory (RRAM). Moreover, strong NDR behavior was observed at room temperature, which provides a great potential application in advanced electronic devices. Finally, the combined physical model of conductive filament and Schottky barrier reinstallment is demonstrated to explain the coexistence phenomenon. Thus, in this, study we propose a new strategy for preparing a multifunctional electronic device with multiple physical attributes in the future.