Issue 2, 2016

A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiOx layer

Abstract

In this work, we investigated SiOx-based interfacial resistive switching in planar metal–insulator–metal structures using physical/chemical/electrical analyses. This work helps clarify the interfacial reaction process and mechanism in SiOx, and also shows the potential for high temperature operation in future nonvolatile memory applications.

Graphical abstract: A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiOx layer

Article information

Article type
Communication
Submitted
27 Oct 2015
Accepted
23 Nov 2015
First published
25 Nov 2015

Phys. Chem. Chem. Phys., 2016,18, 700-703

Author version available

A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiOx layer

F. Zhou, Y. Chang, Y. Chen, X. Wu, Y. Zhang, B. Fowler and J. C. Lee, Phys. Chem. Chem. Phys., 2016, 18, 700 DOI: 10.1039/C5CP06507K

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