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Issue 45, 2015
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Programmable diode/resistor-like behavior of nanostructured vanadium pentoxide xerogel thin film

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Abstract

Electrical properties of a Cr/V2O5/Cr structure are investigated and switching of the device due to electrochemical reactions is observed at low bias (<1 V). Depending on the polarity of the first applied bias, the switched device can behave like a diode (forward sweep first) or a resistor (reverse sweep first). The switching is irreversible and persistent, lasting for more than one month. By performing environmental tests, we prove that water molecules in the atmosphere and intercalated in the xerogel film are involved in the electrochemical reactions. It is proposed that an interfacial layer with reduced oxidation state forms at the Cr/V2O5 interface, and creates a higher Schottky barrier due to rise of electron affinity. Different interfacial layer thicknesses in forward and reverse first sweeps are responsible for different IV characteristics in subsequent sweeps. The results suggest future applications of these V2O5 thin films in low-power read-only memory devices and diode-resistor networks.

Graphical abstract: Programmable diode/resistor-like behavior of nanostructured vanadium pentoxide xerogel thin film

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Publication details

The article was received on 10 Aug 2015, accepted on 23 Oct 2015 and first published on 26 Oct 2015


Article type: Communication
DOI: 10.1039/C5CP04755B
Citation: Phys. Chem. Chem. Phys., 2015,17, 30248-30254
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    Programmable diode/resistor-like behavior of nanostructured vanadium pentoxide xerogel thin film

    Z. Wan, R. B. Darling and M. P. Anantram, Phys. Chem. Chem. Phys., 2015, 17, 30248
    DOI: 10.1039/C5CP04755B

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