Issue 27, 2015

Realizing chemical codoping in TiO2

Abstract

We demonstrate experimentally a chemical codoping approach that would simultaneously narrow the band gap and control the band edge positions of TiO2 semiconductors. It is shown that a sequential doping scheme with nitrogen (N) leading the way, followed by phosphorus (P), is crucial for the incorporation of both N and P into the anion sites. Various characterization techniques confirm the formation of the N–P bonds, and as a consequence of chemical codoping, the band gap of TiO2 is reduced from 3.2 eV to 1.8 eV. The realization of chemical codoping could be an important step forward in improving the general performance of electronic and optoelectronic materials and devices.

Graphical abstract: Realizing chemical codoping in TiO2

Supplementary files

Article information

Article type
Paper
Submitted
07 Apr 2015
Accepted
26 May 2015
First published
05 Jun 2015

Phys. Chem. Chem. Phys., 2015,17, 17989-17994

Author version available

Realizing chemical codoping in TiO2

F. Wang, Y. Sun, J. B. Hatch, H. Xing, X. Zhu, H. Zhang, X. Xu, H. Luo, S. Perera, S. Zhang and H. Zeng, Phys. Chem. Chem. Phys., 2015, 17, 17989 DOI: 10.1039/C5CP02020D

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