Influence of the interface in quantum corrections on the low-temperature resistance of La2/3Sr1/3MnO3 trilayer masking thin films

Abstract

We report the low-temperature resistance upturn in sandwiched structures of La_2/3Sr_1/3MnO₃/ZrO₂/La_2/3Sr_1/3MnO₃ and La_2/3Sr_1/3MnO₃/LaMnO₃/La_2/3Sr_1/3MnO₃, while it disappeared when the interlayer was replaced by YBa₂Cu₃O₇. The experimental data have been analyzed qualitatively and quantitatively. The results show that the low temperature resistance upturn is mainly due to the quantum correction effects driven by the weak localization and the electron–electron interaction in such a strongly correlated system, and the contribution of each factor varies with grain boundaries. Moreover, the resistance upturns are suppressed by a local magnetic field. These findings will help to further understand the physical mechanism of low-temperature resistance upturn in colossal magnetoresistance manganites. Furthermore, it is also helpful to reveal the intrinsic transport mechanism at the interfaces of semiconductor/ferromagnetism and antiferromagnetism/ferromagnetism.