Tip-enhanced Raman spectroscopic measurement of stress change in the local domain of epitaxial graphene on the carbon face of 4H-SiC(000–1)

Toshiaki Suzuki; Tamitake Itoh; Sanpon Vantasin; Satoshi Minami; Yasunori Kutsuma; Koji Ashida; Tada-aki Kaneko; Yusuke Morisawa; Takeshi Miura; Yukihiro Ozaki

doi:10.1039/C4CP02078B

Tip-enhanced Raman spectroscopic measurement of stress change in the local domain of epitaxial graphene on the carbon face of 4H-SiC(000–1)†

Toshiaki Suzuki,^a Tamitake Itoh,*^b Sanpon Vantasin,^a Satoshi Minami,^a Yasunori Kutsuma,^c Koji Ashida,^c Tada-aki Kaneko,^c Yusuke Morisawa,^d Takeshi Miura^e and Yukihiro Ozaki*^a

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* Corresponding authors

^a Department of Chemistry, School of Science and Technology, Kwansei Gakuin University, Gakuen 2-1, Sanda, Hyogo 669-1337, Japan
E-mail: ozaki@kwansei.ac.jp
Fax: +81-795-65-9077
Tel: +81-795-65-8349

^b Nano-Bioanalysis Research Group, Health Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Takamatsu, Kagawa 761-0395, Japan
E-mail: tamitake-itou@aist.go.jp
Fax: +81-87-869-4113
Tel: +81-87-869-3557

^c Department of Physics, School of Science and Technology, Kwansei Gakuin University, Gakuen 2-1, Sanda, Hyogo 669-1337, Japan

^d Department of Chemistry, School of Science and Engineering, Kinki University, 3-4-1 Kowakae, Higashi-Osaka, Osaka 577-8502, Japan

^e UNISOKU Co. Ltd., 2-4-3 Kasugano, Hirakata, Osaka 573-0131, Japan

Abstract

We develop a bulk silver tip for tip-enhanced Raman scattering (TERS) and obtain TERS spectra of epitaxial graphene on the carbon face of 4H-SiC(000–1) with a high signal-to-noise ratio. Thanks to the high quality of TERS spectra we firstly find that the G band in the TERS spectra exhibits position-by-position variations in both lower wavenumber shifts and spectral broadening. The analysis of the variations reveals that the shifts and broadenings have a linear correlation between each other, indicating that the variations are induced by the position dependent local stress on graphene based on a uniaxial strain model.

Physical Chemistry Chemical Physics

Tip-enhanced Raman spectroscopic measurement of stress change in the local domain of epitaxial graphene on the carbon face of 4H-SiC(000–1)†

Abstract

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Tip-enhanced Raman spectroscopic measurement of stress change in the local domain of epitaxial graphene on the carbon face of 4H-SiC(000–1)

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