Issue 31, 2014

Enhanced anomalous Hall effect in Fe nanocluster assembled thin films

Abstract

An enhanced anomalous Hall effect is observed in heterogeneous uniform Fe cluster assembled films with different film thicknesses (ta = 160–1200 nm) fabricated by a plasma-gas-condensation method. The anomalous Hall coefficient (Rs) at ta = 1200 nm reaches its maximum of 2.4 × 10−8 Ω cm G−1 at 300 K, which is almost four orders of magnitude larger than bulk Fe. The saturated Hall resistivity (ρAxy) first increases and then decreases with the increase of temperature accompanied by a sign change from positive to negative. Analysis of the results revealed that ρAxy decreases with increasing longitudinal resistivity (ρxx) on a double-logarithmic scale and obeys a new scaling relation of log(ρAxy/ρxx) = a0 + b0 log ρxx.

Graphical abstract: Enhanced anomalous Hall effect in Fe nanocluster assembled thin films

Supplementary files

Article information

Article type
Paper
Submitted
06 Apr 2014
Accepted
19 May 2014
First published
21 May 2014

Phys. Chem. Chem. Phys., 2014,16, 16623-16628

Enhanced anomalous Hall effect in Fe nanocluster assembled thin films

J. Wang, W. Mi, L. Wang, Q. Zhang and D. Peng, Phys. Chem. Chem. Phys., 2014, 16, 16623 DOI: 10.1039/C4CP01493F

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