Enhanced ionic conductivity in polycrystalline TiO2 by “one-dimensional doping”

Abstract

The influence of line defects (dislocations) on the electrical properties of polycrystalline TiO₂ was investigated. Line defects were created in TiO₂ during spark plasma sintering at 1000 °C and 400 MPa. TEM characterisation indicates dislocations to be preferably oriented on {110} and {101} planes. The measured electrical conductivity as a function of oxygen partial pressure and temperature revealed that the dislocations play a vital role in modifying the defect chemistry of TiO₂. The presence of dislocations enhanced the ionic conductivity over a wide range of oxygen partial pressures. The observed changes can be interpreted in terms of negatively charged dislocation cores and adjacent space charge accumulation layers. The present findings point towards an alternative method to tune the electrical properties of ionic solids.