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Issue 42, 2012
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Solution-processed vanadium oxide as a hole collection layer on an ITO electrode for high-performance polymer solar cells

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Abstract

A solution-processed vanadium oxide (s-VOx) anode buffer layer on an indium-tin-oxide (ITO) electrode was used instead of PEDOT:PSS for improving the stability and photovoltaic performance of the polymer solar cells (PSCs). The s-VOx layer was prepared by spin-coating a vanadyl acetylacetonate (VO(acac)2) isopropyl alcohol solution on the ITO electrode and then thermal annealing at 150 °C for 10 min. The s-VOx oxide layer is highly transparent in the visible range and shows effective hole collection property. The photovoltaic performance of the s-VOx buffer layer was studied by fabricating the PSCs based on poly(3-hexylthiophene) (P3HT) as an electron donor and four soluble fullerene derivatives, [6,6]-phenyl-C61-butyric acid methyl ester (PC60BM), [6,6]-phenyl-C71-butyric acid methyl ester (PC70BM), indene-C60 bisadduct (IC60BA), and indene-C70 bisadduct (IC70BA), as electron acceptors. The PSCs with the s-VOx buffer layer show improved performance in comparison with the traditional devices with the PEDOT:PSS buffer layer on ITO, no matter which fullerene derivative was used as an acceptor. The power conversion efficiency of the PSC based on P3HT:IC70BA (1 : 1, w/w) with the s-VOx anode buffer layer reached 6.35% under the illumination of AM1.5G 100 mW cm−2.

Graphical abstract: Solution-processed vanadium oxide as a hole collection layer on an ITO electrode for high-performance polymer solar cells

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Publication details

The article was received on 06 Sep 2012, accepted on 07 Sep 2012 and first published on 10 Sep 2012


Article type: Paper
DOI: 10.1039/C2CP43125D
Citation: Phys. Chem. Chem. Phys., 2012,14, 14589-14595
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    Solution-processed vanadium oxide as a hole collection layer on an ITO electrode for high-performance polymer solar cells

    Z. Tan, W. Zhang, C. Cui, Y. Ding, D. Qian, Q. Xu, L. Li, S. Li and Y. Li, Phys. Chem. Chem. Phys., 2012, 14, 14589
    DOI: 10.1039/C2CP43125D

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