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Issue 41, 2012
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Multifunctional phosphonic acid self-assembled monolayers on metal oxides as dielectrics, interface modification layers and semiconductors for low-voltage high-performance organic field-effect transistors

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Abstract

Insulating and semiconducting molecular phosphonic acid (PA) self-assembled monolayers (SAMs) have been developed for applications in organic field-effect transistors (OFETs) for low-power, low-cost flexible electronics. Multifunctional SAMs on ultrathin metal oxides, such as hafnium oxide and aluminum oxide, are shown to enable (1) low-voltage (sub 2 V) OFETs through dielectric and interface engineering on rigid and plastic substrates, (2) simultaneous one-component modification of source–drain and dielectric surfaces in bottom-contact OFETs, and (3) SAM-FETs based on molecular monolayer semiconductors. The combination of excellent dielectric and interfacial properties results in high-performance OFETs with low-subthreshold slopes down to 75 mV dec−1, high Ion/Ioff ratios of 105–107, contact resistance down to 700 Ω cm, charge carrier mobilities of 0.1–4.6 cm2 V−1 s−1, and general applicability to solution-processed and vacuum-deposited n-type and p-type organic and polymer semiconductors.

Graphical abstract: Multifunctional phosphonic acid self-assembled monolayers on metal oxides as dielectrics, interface modification layers and semiconductors for low-voltage high-performance organic field-effect transistors

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Publication details

The article was received on 14 May 2012, accepted on 14 Jun 2012 and first published on 14 Jun 2012


Article type: Perspective
DOI: 10.1039/C2CP41557G
Citation: Phys. Chem. Chem. Phys., 2012,14, 14110-14126
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    Multifunctional phosphonic acid self-assembled monolayers on metal oxides as dielectrics, interface modification layers and semiconductors for low-voltage high-performance organic field-effect transistors

    H. Ma, O. Acton, D. O. Hutchins, N. Cernetic and A. K.-Y. Jen, Phys. Chem. Chem. Phys., 2012, 14, 14110
    DOI: 10.1039/C2CP41557G

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