Issue 32, 2011

Bias-stress effects in organic field-effect transistors based on self-assembled monolayer nanodielectrics

Abstract

The electrical stability of low-voltage organic transistors based on phosphonic acid self-assembled monolayer (SAM) dielectrics is investigated using four different semiconductors. The threshold voltage shift in these devices shows a stretched-exponential time dependence under continuous gate bias with a relaxation time in the range of 103–105 s, at room temperature. Differences in the bias instability of transistors based on different self-assembled monolayers and organic semiconductors suggest that charge trapping into localized states in the semiconductor is not the only mechanism responsible for the observed instability. By applying 1–5 s long programming voltage pulses of 2–3 V in amplitude, a large reversible threshold voltage shift can be produced. The retention time of the programmed state was measured to be on the order of 30 h. The combination of low voltage operation and relatively long retention times makes these devices interesting for ultra-low power memory applications.

Graphical abstract: Bias-stress effects in organic field-effect transistors based on self-assembled monolayer nanodielectrics

Article information

Article type
Paper
Submitted
15 Mar 2011
Accepted
25 May 2011
First published
20 Jun 2011

Phys. Chem. Chem. Phys., 2011,13, 14387-14393

Bias-stress effects in organic field-effect transistors based on self-assembled monolayer nanodielectrics

F. Colléaux, J. M. Ball, P. H. Wöbkenberg, P. J. Hotchkiss, S. R. Marder and T. D. Anthopoulos, Phys. Chem. Chem. Phys., 2011, 13, 14387 DOI: 10.1039/C1CP20769E

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