Issue 42, 2013

Extended spectral response in In0.82Ga0.18As/InP photodetector using InP as a window layer grown by MOCVD

Abstract

Extended spectral response InGaAs detectors have been grown, fabricated, and characterized for near-infrared detection. The atomic structure of the In0.82Ga0.18As/InP interface was investigated to determine the inhibition of mismatch defects of the two-step growth by TEM. The heterogeneous interface is formed from the alternation of crystallographically abrupt and partly amorphous regions. Dark current of the detector under different temperatures was analyzed to determine the generating mechanism. Due to the presence of the InP window layer and In0.82Ga0.18As absorber layer in the heterostructure, the wavelength spectral response range of the detector is from 1 to 2.5 μm.

Graphical abstract: Extended spectral response in In0.82Ga0.18As/InP photodetector using InP as a window layer grown by MOCVD

Article information

Article type
Paper
Submitted
17 Jun 2013
Accepted
04 Sep 2013
First published
04 Sep 2013

CrystEngComm, 2013,15, 8461-8464

Extended spectral response in In0.82Ga0.18As/InP photodetector using InP as a window layer grown by MOCVD

G. Miao, T. Zhang, Z. Zhang and Y. Jin, CrystEngComm, 2013, 15, 8461 DOI: 10.1039/C3CE41162A

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