Control of selective and catalyst-free growth of Sb2Te3 and Te nanowires from sputter-deposited Al-Sb-Te thin films

Byeong Geun Kim; Byung-Sung Kim; Seong-Min Jeong; Soon-Mok Choi; Dongmok Whang; Hong-Lim Lee; Sang-Hoon Hyun

doi:10.1039/C2CE25290B

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Control of selective and catalyst-free growth of Sb₂Te₃ and Te nanowires from sputter-deposited Al-Sb-Te thin films†

Byeong Geun Kim,^a Byung-Sung Kim,^b Seong-Min Jeong,^c Soon-Mok Choi,^c Dongmok Whang,^b Hong-Lim Lee^a and Sang-Hoon Hyun*^a

Author affiliations

* Corresponding authors

^a Department of Materials Science and Engineering, Yonsei University, Seoul, Korea
E-mail: prohsh@yonsei.ac.kr
Fax: +82 2 365 5882
Tel: +82 2 2123 2850

^b School of Advanced Materials Science & Engineering and Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, Korea

^c Korea Institute of Ceramic Engineering and Technology (KICET), Seoul, Korea

Abstract

We report the selective and catalyst-free growth of Sb₂Te₃ and Te nanowires by thermal annealing of sputter-deposited Al–Sb–Te thin films. Sb₂Te₃ and Te nanowires were grown at low temperature (∼250 °C) under N₂ and O₂ gas atmospheres, respectively, and they were extruded spontaneously on the surfaces of Al–Sb–Te films with increasing annealing temperature.

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Article information

DOI: https://doi.org/10.1039/C2CE25290B
Article type: Communication
Submitted: 29 Feb 2012
Accepted: 28 Mar 2012
First published: 28 Mar 2012

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CrystEngComm, 2012,14, 4255-4258

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Control of selective and catalyst-free growth of Sb₂Te₃ and Te nanowires from sputter-deposited Al-Sb-Te thin films

B. G. Kim, B. Kim, S. Jeong, S. Choi, D. Whang, H. Lee and S. Hyun, CrystEngComm, 2012, 14, 4255 DOI: 10.1039/C2CE25290B

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