Issue 16, 2011
From the journal:

CrystEngComm

Flux growth of Yb3+-doped RE2O3 (RE = Y,Lu) single crystals at half their melting point temperature

Philippe Veber,a   Matias Velázquez,*a   Véronique Jubera,a   Stanislav Pécheva  and  Oudomsack Viraphonga  

* Corresponding authors

a CNRS, Université de Bordeaux, ICMCB, 87 avenue du Dr A. Schweitzer, Pessac cedex, France
E-mail: matias.velazquez@icmcb-bordeaux.cnrs.fr
Fax: +33 05 40 00 27 61
Tel: +33 05 40 00 27 56

Abstract

We discuss a new, cheap, simple, reliable and safe growth process of Yb3+-doped Y2O3 and Lu2O3 single crystals by a flux method, using an original, nontoxic solvent in a growth setup operative in air and at half the melting temperature of cubic RE2O3. Several mm3-sized Yb3+-doped Y2O3 and Lu2O3 single crystals were grown, the orientation, purity and Yb3+-concentration of which were characterized by means of X-ray diffraction, Fourier transform infrared (FTIR) spectroscopy and electron probe microanalysis (EPMA). A preliminary characterization of Yb3+-doped cubic RE2O3 (RE = Y,Lu) single crystals' basic spectroscopic and laser parameters is presented.

Graphical abstract: Flux growth of Yb3+-doped RE2O3 (RE = Y,Lu) single crystals at half their melting point temperature

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Article information

DOI
https://doi.org/10.1039/C1CE00015B
Article type
Paper
Submitted
06 Jan 2011
Accepted
06 May 2011
First published
15 Jun 2011

CrystEngComm, 2011,13, 5220-5225

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Flux growth of Yb3+-doped RE2O3 (RE = Y,Lu) single crystals at half their melting point temperature

P. Veber, M. Velázquez, V. Jubera, S. Péchev and O. Viraphong, CrystEngComm, 2011, 13, 5220 DOI: 10.1039/C1CE00015B

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