Issue 48, 2017

Low-temperature, high-mobility, solution-processed metal oxide semiconductors fabricated with oxygen radical assisted perchlorate aqueous precursors

Abstract

In this report, a simple and general chemical route for fabricating MO semiconducting films at a relatively low temperature without any fuel additives or special annealing steps was demonstrated. The precursor, which consisted of perchlorate, nitrate, and water, is easily converted into In2O3 at an annealing temperature of 250 °C due to oxygen radical assisted decomposition and generation of a large amount of heat. It is found that perchlorate salt can decompose and form an oxide film with high quality at a lower temperature when assisted by nitrate salt. The optimized In2O3–TFT fabricated via this precursor exhibits a saturation mobility of 14.5 cm2 V−1 s−1. Furthermore, this approach has been expanded to the fabrication of ZnO films and attained improved performance, indicating its universality.

Graphical abstract: Low-temperature, high-mobility, solution-processed metal oxide semiconductors fabricated with oxygen radical assisted perchlorate aqueous precursors

Supplementary files

Article information

Article type
Communication
Submitted
14 Feb 2017
Accepted
21 May 2017
First published
22 May 2017

Chem. Commun., 2017,53, 6436-6439

Low-temperature, high-mobility, solution-processed metal oxide semiconductors fabricated with oxygen radical assisted perchlorate aqueous precursors

P. Gao, L. Lan, Z. Lin, S. Sun, Y. Li, W. Song, E. Song, P. Zhang and J. Peng, Chem. Commun., 2017, 53, 6436 DOI: 10.1039/C7CC01100H

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