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Issue 73, 2016
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Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors

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Abstract

In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.

Graphical abstract: Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors

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Publication details

The article was received on 16 May 2016, accepted on 09 Aug 2016 and first published on 11 Aug 2016


Article type: Communication
DOI: 10.1039/C6CC04052G
Citation: Chem. Commun., 2016,52, 10988-10991
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    Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors

    S. Li, Z. Wang, H. Jiang, L. Zhang, J. Ren, M. Zheng, L. Dong and L. Sun, Chem. Commun., 2016, 52, 10988
    DOI: 10.1039/C6CC04052G

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