Issue 73, 2016
From the journal:

Chemical Communications

Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors†

Shaobo Li,abc   Zhaofeng Wang,b   Hanmei Jiang,ac   Limei Zhang,ac   Jingzheng Ren,d   Mingtao Zheng,be   Lichun Dong*ac  and  Luyi Sun*b  

* Corresponding authors

a School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044, China
E-mail: lcdong72@cqu.edu.cn
Fax: +86 (023) 6567-8934
Tel: +86 (023) 6567-8941

b Department of Chemical & Biomolecular Engineering and Polymer Program, Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269, USA
E-mail: luyi.sun@uconn.edu
Fax: +1-(860) 486-4745
Tel: +1-(860) 486-6895

c Key Laboratory of Low-grade Energy Utilization Technologies & Systems of the Ministry of Education, Chongqing University, Chongqing 400044, China

d Institute of Technology and Innovation, University of Southern Denmark, Niels Bohrs Allé 1, 5230 Odense M, Denmark

e College of Materials and Energy, South China Agricultural University, Guangzhou 510642, China

Abstract

In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.

Graphical abstract: Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors

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Article information

DOI
https://doi.org/10.1039/C6CC04052G
Article type
Communication
Submitted
16 May 2016
Accepted
09 Aug 2016
First published
11 Aug 2016

Chem. Commun., 2016,52, 10988-10991

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Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors

S. Li, Z. Wang, H. Jiang, L. Zhang, J. Ren, M. Zheng, L. Dong and L. Sun, Chem. Commun., 2016, 52, 10988 DOI: 10.1039/C6CC04052G

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