Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devices

Sung Pyo Park; Doo Hyun Yoon; Young Jun Tak; Heesoo Lee; Hyun Jae Kim

doi:10.1039/C4CC10209F

You do not have JavaScript enabled. Please enable JavaScript to access the full features of the site or access our non-JavaScript page.

Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnO_x-based resistive random access memory devices†

Sung Pyo Park,^a Doo Hyun Yoon,^a Young Jun Tak,^a Heesoo Lee^a and Hyun Jae Kim*^a

Author affiliations

* Corresponding authors

^a School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea
E-mail: hjk3@yonsei.ac.kr
Fax: +82-2-2123-8123
Tel: +82-2-2123-5865

Abstract

Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO_x) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnO_x RRAM devices could be one of the candidates for the development of low cost RRAM.

Download options Please wait...

Supplementary files

Supplementary information PDF (294K)

Article information

DOI: https://doi.org/10.1039/C4CC10209F
Article type: Communication
Submitted: 21 Dec 2014
Accepted: 23 Apr 2015
First published: 27 Apr 2015
This article is Open Access

Download Citation

Chem. Commun., 2015,51, 9173-9176

Author version available

Download author version (PDF)

Permissions

Request permissions

Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnO_x-based resistive random access memory devices

S. P. Park, D. H. Yoon, Y. J. Tak, H. Lee and H. J. Kim, Chem. Commun., 2015, 51, 9173 DOI: 10.1039/C4CC10209F

This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. You can use material from this article in other publications, without requesting further permission from the RSC, provided that the correct acknowledgement is given and it is not used for commercial purposes.

To request permission to reproduce material from this article in a commercial publication, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party commercial publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Social activity

Fetching data from CrossRef.
This may take some time to load.

Chemical Communications