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Issue 72, 2014
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Lateral growth of ZnO nanorod arrays in polyhedral structures for high on-current field-effect transistors

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Abstract

Lateral growth of one-dimensional nanostructures is crucial for high performance field-effect transistors (FETs) which can drive a high on-current that is proportional to the number of nanorods (NRs) aligned between electrodes. Hence, it is strongly required to laterally and directly grow a large number of NRs between electrodes. For the first time, we propose a polyhedral-type FET (PH-FET) based on laterally-grown ZnO NRs, which includes circle, square and triangle configurations. The PH-FET structure not only provides a larger contact area than that of the planar parallel-type FET so that a great number of ZnO NRs are aligned between electrodes, but also generates a high on-current in the mA range (i.e., 5.5–6.8 mA). The high on-current PH-FET opens up a new range of applications for power devices where large currents have to be switched.

Graphical abstract: Lateral growth of ZnO nanorod arrays in polyhedral structures for high on-current field-effect transistors

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Publication details

The article was received on 07 Jun 2014, accepted on 22 Jul 2014 and first published on 28 Jul 2014


Article type: Communication
DOI: 10.1039/C4CC04340E
Citation: Chem. Commun., 2014,50, 10502-10505
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    Lateral growth of ZnO nanorod arrays in polyhedral structures for high on-current field-effect transistors

    Y. Park, W. Rho, T. Mahmoudi and Y. Hahn, Chem. Commun., 2014, 50, 10502
    DOI: 10.1039/C4CC04340E

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