Issue 58, 2012
From the journal:

Chemical Communications

Mode tunable p-type Si nanowire transistor based zero drive load logic inverter†

Kyeong-Ju Moon,a   Tae-Il Lee,a   Sang-Hoon Lee,a   Young-Uk Han,b   Moon-Ho Hamb  and  Jae-Min Myoung*a  

* Corresponding authors

a Department of Materials Science and Engineering, Yonsei University, 134 Shinchondong, Seoul, Korea
E-mail: jmmyoung@yonsei.ac.kr
Fax: +82-2-365-2680
Tel: +82-2-2123-2843

b School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Oryongdong, Gwangju, Korea
Fax: +82-62-715-2304
Tel: +82-62-715-2321

Abstract

A design platform for a zero drive load logic inverter consisting of p-channel Si nanowire based transistors, which controlled their operating mode through an implantation into a gate dielectric layer was demonstrated. As a result, a nanowire based class D inverter having a 4.6 gain value at VDD of −20 V was successfully fabricated on a substrate.

Graphical abstract: Mode tunable p-type Si nanowire transistor based zero drive load logic inverter

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Article information

DOI
https://doi.org/10.1039/C2CC33818A
Article type
Communication
Submitted
05 Mar 2012
Accepted
31 May 2012
First published
18 Jun 2012

Chem. Commun., 2012,48, 7307-7309

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Mode tunable p-type Si nanowire transistor based zero drive load logic inverter

K. Moon, T. Lee, S. Lee, Y. Han, M. Ham and J. Myoung, Chem. Commun., 2012, 48, 7307 DOI: 10.1039/C2CC33818A

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