Issue 66, 2012

Photoelectrochemical performance enhanced by a nickel oxide–hematite p–n junction photoanode

Abstract

A p–n junction photoanode has been fabricated by depositing p-type NiO nanoparticles on the n-type hematite thin film. Such a photoanode is employed for a photoelectrochemical cell. NiO not only facilitates the extraction of accumulated holes from hematite via the p–n junction, but also lowers the barrier for oxygen evolution reaction.

Graphical abstract: Photoelectrochemical performance enhanced by a nickel oxide–hematite p–n junction photoanode

Supplementary files

Article information

Article type
Communication
Submitted
16 Jan 2012
Accepted
26 Jun 2012
First published
27 Jun 2012

Chem. Commun., 2012,48, 8213-8215

Photoelectrochemical performance enhanced by a nickel oxide–hematite p–n junction photoanode

J. Li, F. Meng, S. Suri, W. Ding, F. Huang and N. Wu, Chem. Commun., 2012, 48, 8213 DOI: 10.1039/C2CC30376K

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